Poster Session I: Nanoelectronics

Localized growth of suspended SWCNTs by means of an “all-laser” process and their direct integration into nanoelectronic devices

M.A. El Khakani, J.H. Yi and B. Aïssa
Institut National de la Recherche Scientifique, INRS-Énergie, Matériaux et Télécommunications, Québec, Canada

Fabrication and characterization of a in-plane gate quantum dot resonant tunneling transistor

S.H. Son^1,2,4, Y.S. Choi^1,2, K.H. Cho ^1,4, Y.J. Park ², J.I. Lee ², Y.S. Yu ³, S.W. Hwang ^1,4, D. Ahn⁴

¹ Korea University, South Korea
² Korea Institute of Science and Technology, South Korea
³ Hankyong National University, South Korea
⁴ University of Seoul, South Korea

Fabrication and Characteristics of Pre-aligned GaN Nanowire Field-Effect Transistors

Ho-Young Cha¹, Huaqiang Wu¹, Mvs Chandrashekhar¹, G. Koley², M.G. Spencer¹

¹ Cornell University, Ithaca, NY
² University of South Carolina, Columbia, SC

Design of a Novel Device Architecture: Parallel Connected Hetero-Material Double-Gate (PCHEM-DG) MOSFET
S. Ganguly, A.A.P. Sarab, D. Datta, S. Dasgupta
Indian School of Mines, Dhanbad, India

Transmission Through the Band Gap States in Schottky Barrier Carbon Nanotube Transistors
Tongsheng Xia, Leonard Register and Sanjay Banerjee
University of Texas at Austin, Austin, TX

Gate-Channel Capacitance Characteristics in Nano-Scale FinFET
Jianning Wang, Chia-Ming Liu, Vijay Madhuravasal, Xunyu Zhu, Yumin Zhang, and Chris Hutchens
Oklahoma State University, Stillwater, OK

High Temperature Characterization of FinFET
Vijay Madhuravasal, Chris Hutchens, Jianning Wang, and Yumin Zhang
Oklahoma State University, Stillwater, OK

Electrical Noise in Gold Nanocluster Films
M.G. Ancona, R.W. Rendell, A.W. Snow, E.E. Foos and W. Kruppa
Naval Research Laboratory, Washington, DC

Field emission triode of low temperature synthesized ZnO NWs
Chia Ying Lee, Seu Yi Li, Pang Lin, and Tseung Yuen Tseng
National Chiao Tung University, Hsinchu, Taiwan

Simulation Method of Radio-Frequency Single-Electron Transistor (RF-SET) by SPICE
Y. S. Yu¹, S. H. Son^2,3, J. H. Oh³, S. W. Hwang^2,3, and D. Ahn^3
1 Hankyong National University, South Korea
² Korea University, 136-701 South Korea
³ University of Seoul, South Korea

Poster Session I: Spintronics and Nanomagnetics

Effect of Annealing on the Conductivity of Electroless Deposited Ni Nanowires and Films
Sathya Mani, Taher Saif, and Jong Han
University of Illinois at Urbana-Champaign, Urbana, IL

Spin-resolved Structure of Magnetic Vortices in Patterned, Ultrathin Cobalt Films
Jian Li and Carl Rau
Rice University, Houston, TX

Interfacial Characterization of PZT/LSMO/Pt/Ti/Si/SiO₂ Thin Film by Pulsed Laser and Sol-Gel Deposition
Kang Ryong Choi, Sam Jin Kim, In-Bo Shim and Chul Sung Kim
Kookmin University, Seoul, South Korea

Studies of Magnetization Processes in Samples of Random Oriented Magnetic Nanoparticles
A.N. Bazhan
P.L. Kaptiza Institute for Physical Problems, Moscow, Russia

Characterization on Fe₃O₄ Nanoparticles by Mossbauer Studies
Sang Won Lee, Sam Jin Kim, In-Bo Shim, and Chul Sung Kim
Kookmin University, Seoul, South Korea

LLG Calculations of SPT Head with Side Shields
Yashushi Kanai¹, Masahiko Saiki¹, and Kazuetsu Yoshida^2
1Nigata Institute of Technology, Kashiwazaki, Japan
²Kogakuin University, Tokyo, Japan

Magnetic Properties of Ni-Zn Spinel Ferrite Nanoparticles for applications in Biomedicine
Seung Wha Lee¹, Chul Sung Kim^2
1Chungju National University, Chungju, South Korea
² Kookmin University, Seoul, South Korea

Nanoscale Memory Devices
S. Khizroev¹, R. Chomko¹, V. Renugopalakrishnan², and D. Litvinov^3
1 Florida International University, Miami, FL

² Harvard University, Boston, MA
³ University of Houston, Houston, TX

Multi-Frequency Method for IN-Situ FH Analysis at Disk Drive Level
Jin Zhu ¹, Bo Liu ¹ and Lewei Li^2
1 Data Storage Institute, Singapore
² National University of Singapore, Singapore

Physics of Patterned Magnetic Medium Recording: Design Considerations

Chunsheng E¹, D. Smith¹, S. Khizroev², J. Wolfe, D. Weller³, D. Litvinov¹

¹ University of Houston, Houston, TX

² Florida International University, Miami, FL

³ Seagate Technology, San Jose, CA

Playback Analysis of Patterned Magnetic Medium Recording

Darren Smith¹, Chunsheng E¹, S. Khizroev², D. Litvinov¹

¹ University of Houston, Houston, TX

² Florida International University, Miami, FL

Growth of GaMnN Epilayers and Nanostructures Toward Functional Semiconductor Spintronics
Mathew H. Kane, A. Asghar, M. Strassburg, S. Gupta, W.E. Fenwick, Q. Song, U. Haboeck*, A. Hoffmann, D. Azamat, W. Gelhoff*, C.J. Summers, Z.J. Zhang, N. Dietz, Ian T. Ferguson*
Georgia Institute of Technology, Atlanta, GA
*Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany

Bias-Controlled Magnetization Switch in a Magnetic Semiconductor Resonant-Tunneling Diode
Swaroop Ganguly, L.F.Register, S. Banerjee and A.H.MacDonald
University of Texas at Austin, TX

The Magnetic and Structural Properties of Co Ion-Implanted GaN
W. Kim ¹, H. J. Kang ¹, S. K. Oh ¹, S. W. Shin ², J. H. Lee ², J. H. Song ², S. K. Noh ³, S. J. Oh ^4
1 Chungbuk National University, Cheongju, South Korea
² Korea Institute of Science and Thecnology, Seoul, South Korea
³ Korea Research Institute of Standards and Science, Daejeon, South Korea
⁴ Korea Basic Science Institute, Daejeon, South Korea

Mesoscopic Magnetic/Semiconductor Heterostructures
Yongbing Xu, Jill Claydon, Yongxiong Lu and Ehsan Ahmad
The University of York, York, UK

Ferromagnetism and Optical Properties in Manganese-doped ZnO Thin Films for Spintronics
Young-Yeal Song¹, Phan The Long¹, Yong-Goo Yoo², Seong-Cho Yu^1
1 Chungbuk National University, Cheongju, Sourth Korea
² ETRI, Yuseong, Taejon, South Korea

Controlled Electromigration-Driven Switching in Low Resistance FM/NM/I/FM Tunnel Junctions
J. Ventura¹, J. M. Teixeira¹, J. B. Sousa¹, Y. Liu², Z. Zhang² and P. P. Freitas^2
1 IFIMUP, Rua do Campo Alegre, 678, 4169-007, Porto, Portugal.
² INESC-MN, Rua Alves Redol, 9-1, 1000-029 Lisbon, Portugal.

Effect of controlled asymmetry on the switching characteristics of ring based MRAM design
A. S. Mani, D. Geerpuram, V. Baskaran and V. Metlushko
University of Illinois at Chicago, Chicago, IL